Gate Source Capacitance in Microwave Semiconductor Devices Formulas

Gate Source Capacitance refers to the capacitance between the gate and source terminals of a field-effect transistor (FET). And is denoted by C_gs. Gate Source Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Gate Source Capacitance is always positive.

Microwave Semiconductor Devices formulas that make use of Gate Source Capacitance

fxMESFET Cutoff FrequencyGo

fxNoise Factor GaAs MESFETGo

FAQ

What is the Gate Source Capacitance?

Gate Source Capacitance refers to the capacitance between the gate and source terminals of a field-effect transistor (FET). Gate Source Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Gate Source Capacitance is always positive.

Can the Gate Source Capacitance be negative?

No, the Gate Source Capacitance, measured in Capacitance cannot be negative.

What unit is used to measure Gate Source Capacitance?

Gate Source Capacitance is usually measured using the Microfarad[μF] for Capacitance. Farad[μF], Kilofarad[μF], Millifarad[μF] are the few other units in which Gate Source Capacitance can be measured.

Let Others Know

✖

Facebook

Twitter

Copied!