Gate Source Capacitance in Microwave Semiconductor Devices Formulas

Gate Source Capacitance is a parasitic capacitance that exists between the gate and source terminals of a MESFET or other types of transistors. And is denoted by C_gs. Gate Source Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Gate Source Capacitance is always positive.

Formulas to find Gate Source Capacitance in Microwave Semiconductor Devices

fxGate Source CapacitanceGo

Microwave Semiconductor Devices formulas that make use of Gate Source Capacitance

fxTransconductance in MESFETGo

fxCut-off Frequency given Transconductance and CapacitanceGo

fxMaximum Frequency of Oscillation given TransconductanceGo

List of variables in Microwave Semiconductor Devices formulas

fx Transconductance Go

fx Cut-off Frequency Go

FAQ

What is the Gate Source Capacitance?

Gate Source Capacitance is a parasitic capacitance that exists between the gate and source terminals of a MESFET or other types of transistors. Gate Source Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Gate Source Capacitance is always positive.

Can the Gate Source Capacitance be negative?

No, the Gate Source Capacitance, measured in Capacitance cannot be negative.

What unit is used to measure Gate Source Capacitance?

Gate Source Capacitance is usually measured using the Microfarad[μF] for Capacitance. Farad[μF], Kilofarad[μF], Millifarad[μF] are the few other units in which Gate Source Capacitance can be measured.

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