Gate Resistance in MOSFET Formulas

Gate Resistance is the resistance that occurs when a voltage is applied across a MOSFET gate and source. It is caused by the insulating layerthat separates the gate and source terminals. And is denoted by R_gate. Gate Resistance is usually measured using the Ohm for Electric Resistance. Note that the value of Gate Resistance is always positive.

MOSFET formulas that make use of Gate Resistance

fxCommon Gate Output VoltageGo

FAQ

What is the Gate Resistance?

Gate Resistance is the resistance that occurs when a voltage is applied across a MOSFET gate and source. It is caused by the insulating layerthat separates the gate and source terminals. Gate Resistance is usually measured using the Ohm for Electric Resistance. Note that the value of Gate Resistance is always positive.

Can the Gate Resistance be negative?

No, the Gate Resistance, measured in Electric Resistance cannot be negative.

What unit is used to measure Gate Resistance?

Gate Resistance is usually measured using the Ohm[Ω] for Electric Resistance. Megohm[Ω], Microhm[Ω], Volt per Ampere[Ω] are the few other units in which Gate Resistance can be measured.

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