Gate-Drain Capacitance in MOSFET Formulas

Gate-drain capacitance is a parasitic capacitance that exists between the gate and drain electrodes of a field-effect transistor (FET). And is denoted by C_gd. Gate-Drain Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Gate-Drain Capacitance is always positive.

MOSFET formulas that make use of Gate-Drain Capacitance

fxPositive Voltage given Device Parameter in MOSFETGo

fxVoltage across Gate and Source of MOSFET given Input CurrentGo

fxTransition Frequency of MOSFETGo

fxMiller Capacitance of MosfetGo

fxOutput Miller Capacitance MosfetGo

FAQ

What is the Gate-Drain Capacitance?

Gate-drain capacitance is a parasitic capacitance that exists between the gate and drain electrodes of a field-effect transistor (FET). Gate-Drain Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Gate-Drain Capacitance is always positive.

Can the Gate-Drain Capacitance be negative?

No, the Gate-Drain Capacitance, measured in Capacitance cannot be negative.

What unit is used to measure Gate-Drain Capacitance?

Gate-Drain Capacitance is usually measured using the Microfarad[μF] for Capacitance. Farad[μF], Kilofarad[μF], Millifarad[μF] are the few other units in which Gate-Drain Capacitance can be measured.

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