Forward Transconductance FET in Advanced Transistor Devices Formulas

Forward Transconductance FET refers to the change in output current resulting from a change in input voltage, indicating the device’s amplification capability. And is denoted by G_m(fet). Forward Transconductance FET is usually measured using the Millisiemens for Electric Conductance. Note that the value of Forward Transconductance FET is always positive.

Formulas to find Forward Transconductance FET in Advanced Transistor Devices

fxTransconductance of FETGo

Advanced Transistor Devices formulas that make use of Forward Transconductance FET

fxVoltage Gain of FETGo

List of variables in Advanced Transistor Devices formulas

fx Zero Bias Drain Current Go

fx Pinch OFF Voltage Go

fx Drain Source Voltage FET Go

FAQ

What is the Forward Transconductance FET?

Forward Transconductance FET refers to the change in output current resulting from a change in input voltage, indicating the device’s amplification capability. Forward Transconductance FET is usually measured using the Millisiemens for Electric Conductance. Note that the value of Forward Transconductance FET is always positive.

Can the Forward Transconductance FET be negative?

No, the Forward Transconductance FET, measured in Electric Conductance cannot be negative.

What unit is used to measure Forward Transconductance FET?

Forward Transconductance FET is usually measured using the Millisiemens[mS] for Electric Conductance. Siemens[mS], Megasiemens[mS], Mho[mS] are the few other units in which Forward Transconductance FET can be measured.

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