Emitter Resistance in BJT Formulas

Emitter Resistance is a dynamic resistance of the emitter-base junction diode of a transistor. And is denoted by R_e. Emitter Resistance is usually measured using the Kilohm for Electric Resistance. Note that the value of Emitter Resistance is always negative.

Formulas to find Emitter Resistance in BJT

fxEmitter Resistance given Threshold VoltageGo

fxEmitter Resistance given Emitter CurrentGo

fxEmitter Resistance of BJTGo

BJT formulas that make use of Emitter Resistance

fxOverall Voltage Gain of Amplifier when Load Resistance is Connected to OutputGo

fxOverall Voltage Gain of Buffer Amplifier given Load ResistanceGo

fxSmall-Signal Input Resistance given Emitter CurrentGo

List of variables in BJT formulas

fx Threshold Voltage Go

fx Emitter Current Go

fx Small Signal Go

fx Signal Current Go

FAQ

What is the Emitter Resistance?

Emitter Resistance is a dynamic resistance of the emitter-base junction diode of a transistor. Emitter Resistance is usually measured using the Kilohm for Electric Resistance. Note that the value of Emitter Resistance is always negative.

Can the Emitter Resistance be negative?

Yes, the Emitter Resistance, measured in Electric Resistance can be negative.

What unit is used to measure Emitter Resistance?

Emitter Resistance is usually measured using the Kilohm[kΩ] for Electric Resistance. Ohm[kΩ], Megohm[kΩ], Microhm[kΩ] are the few other units in which Emitter Resistance can be measured.

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