Emitter Resistance Base 1 in Silicon Controlled Rectifier Formulas

Emitter resistance base 1 is the resistance offered to the current flowing through the base 1 junction on UJT. And is denoted by R_B1. Emitter Resistance Base 1 is usually measured using the Ohm for Electric Resistance. Note that the value of Emitter Resistance Base 1 is always positive.

Silicon Controlled Rectifier formulas that make use of Emitter Resistance Base 1

fxIntrinsic Stand-off Ratio for UJT based Thyristor Firing CircuitGo

fxEmitter Current for UJT based Thyristor Firing CircuitGo

FAQ

What is the Emitter Resistance Base 1?

Emitter resistance base 1 is the resistance offered to the current flowing through the base 1 junction on UJT. Emitter Resistance Base 1 is usually measured using the Ohm for Electric Resistance. Note that the value of Emitter Resistance Base 1 is always positive.

Can the Emitter Resistance Base 1 be negative?

No, the Emitter Resistance Base 1, measured in Electric Resistance cannot be negative.

What unit is used to measure Emitter Resistance Base 1?

Emitter Resistance Base 1 is usually measured using the Ohm[Ω] for Electric Resistance. Megohm[Ω], Microhm[Ω], Volt per Ampere[Ω] are the few other units in which Emitter Resistance Base 1 can be measured.

Let Others Know

✖

Facebook

Twitter

Copied!