Electron Doping Silicon Mobility in Integrated Circuits (IC) Formulas

Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field. And is denoted by μ_n. Electron Doping Silicon Mobility is usually measured using the Square Centimeter per Volt Second for Mobility. Note that the value of Electron Doping Silicon Mobility is always positive.

Integrated Circuits (IC) formulas that make use of Electron Doping Silicon Mobility

fxOhmic Conductivity of ImpurityGo

fxConductivity of N-TypeGo

fxConductivity of P-TypeGo

fxSheet Resistance of LayerGo

FAQ

What is the Electron Doping Silicon Mobility?

Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field. Electron Doping Silicon Mobility is usually measured using the Square Centimeter per Volt Second for Mobility. Note that the value of Electron Doping Silicon Mobility is always positive.

Can the Electron Doping Silicon Mobility be negative?

No, the Electron Doping Silicon Mobility, measured in Mobility cannot be negative.

What unit is used to measure Electron Doping Silicon Mobility?

Electron Doping Silicon Mobility is usually measured using the Square Centimeter per Volt Second[cm²/V*s] for Mobility. Square Meter per Volt per Second[cm²/V*s] are the few other units in which Electron Doping Silicon Mobility can be measured.

Let Others Know

✖

Facebook

Twitter

Copied!