Drift Resistance (IGBT) in Advanced Transistor Devices Formulas

Drift Resistance (IGBT) is N-drift region of the semiconductor material in the device. The N-drift region is a thick doped silicon that separates the collector from the P-base region. And is denoted by R_d(igbt). Drift Resistance (IGBT) is usually measured using the Kilohm for Electric Resistance. Note that the value of Drift Resistance (IGBT) is always positive.

Advanced Transistor Devices formulas that make use of Drift Resistance (IGBT)

fxVoltage Drop in IGBT in ON-StateGo

FAQ

What is the Drift Resistance (IGBT)?

Drift Resistance (IGBT) is N-drift region of the semiconductor material in the device. The N-drift region is a thick doped silicon that separates the collector from the P-base region. Drift Resistance (IGBT) is usually measured using the Kilohm for Electric Resistance. Note that the value of Drift Resistance (IGBT) is always positive.

Can the Drift Resistance (IGBT) be negative?

No, the Drift Resistance (IGBT), measured in Electric Resistance cannot be negative.

What unit is used to measure Drift Resistance (IGBT)?

Drift Resistance (IGBT) is usually measured using the Kilohm[kΩ] for Electric Resistance. Ohm[kΩ], Megohm[kΩ], Microhm[kΩ] are the few other units in which Drift Resistance (IGBT) can be measured.

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