Drift Current Density due to Holes in Integrated Circuits (IC) Formulas

Drift Current Density due to Holes refers to the movement of charge carriers (holes) in a semiconductor material under the influence of an electric field. And is denoted by J_p. Drift Current Density due to Holes is usually measured using the Ampere per Square Millimeter for Surface Current Density. Note that the value of Drift Current Density due to Holes is always positive.

Formulas to find Drift Current Density due to Holes in Integrated Circuits (IC)

fxDrift Current Density due to HolesGo

List of variables in Integrated Circuits (IC) formulas

fx Hole Concentration Go

fx Hole Mobility Go

fx Electric Field Intensity Go

FAQ

What is the Drift Current Density due to Holes?

Drift Current Density due to Holes refers to the movement of charge carriers (holes) in a semiconductor material under the influence of an electric field. Drift Current Density due to Holes is usually measured using the Ampere per Square Millimeter for Surface Current Density. Note that the value of Drift Current Density due to Holes is always positive.

Can the Drift Current Density due to Holes be negative?

No, the Drift Current Density due to Holes, measured in Surface Current Density cannot be negative.

What unit is used to measure Drift Current Density due to Holes?

Drift Current Density due to Holes is usually measured using the Ampere per Square Millimeter[A/mm²] for Surface Current Density. Ampere per Square Meter[A/mm²], Ampere per Square Centimeter[A/mm²], Ampere per Square Inch[A/mm²] are the few other units in which Drift Current Density due to Holes can be measured.

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