Drain Source Resistance in Basic Transistor Devices Formulas

Drain source resistance in MOSFET is defined as the opposition faced by the current flowing through the drain source terminals. And is denoted by R_ds. Drain Source Resistance is usually measured using the Kilohm for Electric Resistance. Note that the value of Drain Source Resistance is always positive.

Basic Transistor Devices formulas that make use of Drain Source Resistance

fxPower Loss in MOSFETGo

FAQ

What is the Drain Source Resistance?

Drain source resistance in MOSFET is defined as the opposition faced by the current flowing through the drain source terminals. Drain Source Resistance is usually measured using the Kilohm for Electric Resistance. Note that the value of Drain Source Resistance is always positive.

Can the Drain Source Resistance be negative?

No, the Drain Source Resistance, measured in Electric Resistance cannot be negative.

What unit is used to measure Drain Source Resistance?

Drain Source Resistance is usually measured using the Kilohm[kΩ] for Electric Resistance. Ohm[kΩ], Megohm[kΩ], Microhm[kΩ] are the few other units in which Drain Source Resistance can be measured.

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