Drain Resistance in Microwave Semiconductor Devices Formulas

Drain Resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage. And is denoted by R_d. Drain Resistance is usually measured using the Ohm for Electric Resistance. Note that the value of Drain Resistance is always positive.

Formulas to find Drain Resistance in Microwave Semiconductor Devices

fxDrain Resistance of MESFETGo

Microwave Semiconductor Devices formulas that make use of Drain Resistance

fxMaximum Frequency of Oscillations in MESFETGo

fxSource ResistanceGo

fxGate Metallization ResistanceGo

fxInput ResistanceGo

fxCut-off Frequency using Maximum FrequencyGo

List of variables in Microwave Semiconductor Devices formulas

fx Maximum Frequency of Oscillations Go

fx Cut-off Frequency Go

fx Source Resistance Go

fx Gate Metallization Resistance Go

fx Input Resistance Go

FAQ

What is the Drain Resistance?

Drain Resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage. Drain Resistance is usually measured using the Ohm for Electric Resistance. Note that the value of Drain Resistance is always positive.

Can the Drain Resistance be negative?

No, the Drain Resistance, measured in Electric Resistance cannot be negative.

What unit is used to measure Drain Resistance?

Drain Resistance is usually measured using the Ohm[Ω] for Electric Resistance. Megohm[Ω], Microhm[Ω], Volt per Ampere[Ω] are the few other units in which Drain Resistance can be measured.

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