Donor concentration in VLSI Fabrication Formulas

Donor concentration refers to the concentration of donor dopant atoms introduced into a semiconductor material to increase the number of free electrons. And is denoted by N_D. Donor concentration is usually measured using the 1 per Cubic Centimeter for Carrier Concentration. Note that the value of Donor concentration is always positive.

VLSI Fabrication formulas that make use of Donor concentration

fxJunction Built-in Voltage VLSIGo

fxDonor Concentration after Full Scaling VLSIGo

FAQ

What is the Donor concentration?

Donor concentration refers to the concentration of donor dopant atoms introduced into a semiconductor material to increase the number of free electrons. Donor concentration is usually measured using the 1 per Cubic Centimeter for Carrier Concentration. Note that the value of Donor concentration is always positive.

Can the Donor concentration be negative?

No, the Donor concentration, measured in Carrier Concentration cannot be negative.

What unit is used to measure Donor concentration?

Donor concentration is usually measured using the 1 per Cubic Centimeter[1/cm³] for Carrier Concentration. 1 per Cubic Meter[1/cm³], per Liter[1/cm³] are the few other units in which Donor concentration can be measured.

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