Donor Concentration in MOSFET Formulas

Donor concentration is semiconductor physics and refers to the number of donor impurity atoms per unit volume of a semiconductor material. And is denoted by N_d. Donor Concentration is usually measured using the 1 per Cubic Meter for Carrier Concentration. Note that the value of Donor Concentration is always negative.

MOSFET formulas that make use of Donor Concentration

fxBackgate Effect Parameter in PMOSGo

FAQ

What is the Donor Concentration?

Donor concentration is semiconductor physics and refers to the number of donor impurity atoms per unit volume of a semiconductor material. Donor Concentration is usually measured using the 1 per Cubic Meter for Carrier Concentration. Note that the value of Donor Concentration is always negative.

Can the Donor Concentration be negative?

Yes, the Donor Concentration, measured in Carrier Concentration can be negative.

What unit is used to measure Donor Concentration?

Donor Concentration is usually measured using the 1 per Cubic Meter[1/m³] for Carrier Concentration. 1 per Cubic Centimeter[1/m³], per Liter[1/m³] are the few other units in which Donor Concentration can be measured.

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