Collector-Emitter Voltage in BJT Formulas

Collector-Emitter Voltage is the electric potential between the base and collector region of a transistor. And is denoted by V_CE. Collector-Emitter Voltage is usually measured using the Volt for Electric Potential. Note that the value of Collector-Emitter Voltage is always negative.

Formulas to find Collector-Emitter Voltage in BJT

fxCollector to Emitter Voltage at SaturationGo

fxVoltage across Collector-Emitter of BJT AmplifierGo

BJT formulas that make use of Collector-Emitter Voltage

fxCollector Current using Early Voltage for NPN TransistorGo

fxCollector Current given Early Voltage for PNP TransistorGo

fxVoltage Gain given all VoltagesGo

fxAmplification Factor of BJTGo

fxTotal Power Dissipated in BJTGo

fxOutput Resistance of BJTGo

fxOutput Resistance of Transistor when Base Current is ConstantGo

List of variables in BJT formulas

fx Base-Emitter Voltage Go

fx Base-Collector Voltage Go

fx Supply Voltage Go

fx Load Resistance Go

fx Saturation Current Go

fx Threshold Voltage Go

FAQ

What is the Collector-Emitter Voltage?

Collector-Emitter Voltage is the electric potential between the base and collector region of a transistor. Collector-Emitter Voltage is usually measured using the Volt for Electric Potential. Note that the value of Collector-Emitter Voltage is always negative.

Can the Collector-Emitter Voltage be negative?

Yes, the Collector-Emitter Voltage, measured in Electric Potential can be negative.

What unit is used to measure Collector-Emitter Voltage?

Collector-Emitter Voltage is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Collector-Emitter Voltage can be measured.

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