Collector Emitter Breakout Voltage in Integrated Circuits (IC) Formulas

Collector Emitter Breakout Voltage is voltage between the collector and emitter terminals of a bipolar junction transistor without causing a breakdown in the transistor. And is denoted by V_ce. Collector Emitter Breakout Voltage is usually measured using the Volt for Electric Potential. Note that the value of Collector Emitter Breakout Voltage is always positive.

Formulas to find Collector Emitter Breakout Voltage in Integrated Circuits (IC)

fxBreakout Voltage of Collector EmitterGo

List of variables in Integrated Circuits (IC) formulas

fx Collector Base Breakout Voltage Go

fx Current Gain of BJT Go

fx Root Number Go

FAQ

What is the Collector Emitter Breakout Voltage?

Collector Emitter Breakout Voltage is voltage between the collector and emitter terminals of a bipolar junction transistor without causing a breakdown in the transistor. Collector Emitter Breakout Voltage is usually measured using the Volt for Electric Potential. Note that the value of Collector Emitter Breakout Voltage is always positive.

Can the Collector Emitter Breakout Voltage be negative?

No, the Collector Emitter Breakout Voltage, measured in Electric Potential cannot be negative.

What unit is used to measure Collector Emitter Breakout Voltage?

Collector Emitter Breakout Voltage is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Collector Emitter Breakout Voltage can be measured.

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