Channel Conductance FET in Advanced Transistor Devices Formulas

Channel Conductance FET is the measure of how well the channel of an FET conducts current. It is determined by the mobility of the charge carriers in the channel. And is denoted by G_o(fet). Channel Conductance FET is usually measured using the Millisiemens for Electric Conductance. Note that the value of Channel Conductance FET is always negative.

Advanced Transistor Devices formulas that make use of Channel Conductance FET

fxOhmic Region Drain Current of FETGo

FAQ

What is the Channel Conductance FET?

Channel Conductance FET is the measure of how well the channel of an FET conducts current. It is determined by the mobility of the charge carriers in the channel. Channel Conductance FET is usually measured using the Millisiemens for Electric Conductance. Note that the value of Channel Conductance FET is always negative.

Can the Channel Conductance FET be negative?

Yes, the Channel Conductance FET, measured in Electric Conductance can be negative.

What unit is used to measure Channel Conductance FET?

Channel Conductance FET is usually measured using the Millisiemens[mS] for Electric Conductance. Siemens[mS], Megasiemens[mS], Mho[mS] are the few other units in which Channel Conductance FET can be measured.

Let Others Know

✖

Facebook

Twitter

Copied!