Capacitance between Junction of Body and Source in VLSI Fabrication Formulas

Capacitance between Junction of Body and Source is defined as the capacitance between the junction of the body and the source junction of MOSFET. And is denoted by C_jbs. Capacitance between Junction of Body and Source is usually measured using the Microfarad per Square Millimeter for Oxide Capacitance Per Unit Area. Note that the value of Capacitance between Junction of Body and Source is always positive.

VLSI Fabrication formulas that make use of Capacitance between Junction of Body and Source

fxTotal Source Parasitic CapacitanceGo

FAQ

What is the Capacitance between Junction of Body and Source?

Capacitance between Junction of Body and Source is defined as the capacitance between the junction of the body and the source junction of MOSFET. Capacitance between Junction of Body and Source is usually measured using the Microfarad per Square Millimeter for Oxide Capacitance Per Unit Area. Note that the value of Capacitance between Junction of Body and Source is always positive.

Can the Capacitance between Junction of Body and Source be negative?

No, the Capacitance between Junction of Body and Source, measured in Oxide Capacitance Per Unit Area cannot be negative.

What unit is used to measure Capacitance between Junction of Body and Source?

Capacitance between Junction of Body and Source is usually measured using the Microfarad per Square Millimeter[μF/mm²] for Oxide Capacitance Per Unit Area. Farad per Square Meter[μF/mm²], Nanofarad per Square Centimeter[μF/mm²], Microfarad per Square Centimeter[μF/mm²] are the few other units in which Capacitance between Junction of Body and Source can be measured.

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