Built in Potential of Sidewall Junctions in MOSFET Formulas

Built in Potential of Sidewall Junctions refers to the junction formed along the vertical or sidewall surfaces of the transistor structure. And is denoted by Φ_osw. Built in Potential of Sidewall Junctions is usually measured using the Volt for Electric Potential. Note that the value of Built in Potential of Sidewall Junctions is always positive.

MOSFET formulas that make use of Built in Potential of Sidewall Junctions

fxSidewall Voltage Equivalence FactorGo

FAQ

What is the Built in Potential of Sidewall Junctions?

Built in Potential of Sidewall Junctions refers to the junction formed along the vertical or sidewall surfaces of the transistor structure. Built in Potential of Sidewall Junctions is usually measured using the Volt for Electric Potential. Note that the value of Built in Potential of Sidewall Junctions is always positive.

Can the Built in Potential of Sidewall Junctions be negative?

No, the Built in Potential of Sidewall Junctions, measured in Electric Potential cannot be negative.

What unit is used to measure Built in Potential of Sidewall Junctions?

Built in Potential of Sidewall Junctions is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Built in Potential of Sidewall Junctions can be measured.

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