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Built in Junction Potential in MOSFET Formulas
Built in Junction Potential refers to the potential difference or voltage that exists across a semiconductor junction when it is not connected to an external voltage source. And is denoted by Φ
o
. Built in Junction Potential is usually measured using the Volt for Electric Potential. Note that the value of Built in Junction Potential is always positive.
MOSFET formulas that make use of Built in Junction Potential
f
x
Depth of Depletion Region Associated with Source
Go
f
x
Depth of Depletion Region Associated with Drain
Go
FAQ
What is the Built in Junction Potential?
Built in Junction Potential refers to the potential difference or voltage that exists across a semiconductor junction when it is not connected to an external voltage source. Built in Junction Potential is usually measured using the Volt for Electric Potential. Note that the value of Built in Junction Potential is always positive.
Can the Built in Junction Potential be negative?
No, the Built in Junction Potential, measured in Electric Potential cannot be negative.
What unit is used to measure Built in Junction Potential?
Built in Junction Potential is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Built in Junction Potential can be measured.
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