Base–Emitter Junction Capacitance in BJT Formulas

Base–Emitter Junction Capacitance is the capacitance of the junction that is forward-biased and is represented by a diode. And is denoted by C. Base–Emitter Junction Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Base–Emitter Junction Capacitance is always negative.

Formulas to find Base–Emitter Junction Capacitance in BJT

fxBase-Emitter Junction CapacitanceGo

BJT formulas that make use of Base–Emitter Junction Capacitance

fxFinite Input Voltage of BJT at Unity Gain Frequency given Complex Frequency VariableGo

List of variables in BJT formulas

fx Emitter-Base Capacitance Go

FAQ

What is the Base–Emitter Junction Capacitance?

Base–Emitter Junction Capacitance is the capacitance of the junction that is forward-biased and is represented by a diode. Base–Emitter Junction Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Base–Emitter Junction Capacitance is always negative.

Can the Base–Emitter Junction Capacitance be negative?

Yes, the Base–Emitter Junction Capacitance, measured in Capacitance can be negative.

What unit is used to measure Base–Emitter Junction Capacitance?

Base–Emitter Junction Capacitance is usually measured using the Microfarad[μF] for Capacitance. Farad[μF], Kilofarad[μF], Millifarad[μF] are the few other units in which Base–Emitter Junction Capacitance can be measured.

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